Putyato, M.A.: search on Z-Library

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1

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Yu., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V., Shamirzaev, T. S.

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2018

Language:

english

File:

PDF, 282 KB

english, 2018

2

[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

Emelyanov, Eugene A., Petrushkov, Mikhail O., Putyato, Mikhail A., Vasev, Andrei V., Semyagin, Boris R., Preobrazhenskii, Valerii V.

Year:

2019

Language:

english

File:

PDF, 465 KB

english, 2019

3

Optical shutters for a compact femtosecond Yb:KYW laser

Rubtsova, N N, Kovalyov, A A, Ledovskikh, D V, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R, Kuznetsov, S A, Pivtsov, V S, Semenko, A V

Journal:

Year:

2020

Language:

english

File:

PDF, 619 KB

english, 2020

4

Electron microscopy of GaAs Structures with InAs and as quantum dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

5

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M.

Journal:

Year:

2017

Language:

english

File:

PDF, 285 KB

english, 2017

6

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Kisel, V. E., Rudenkov, A. S., Pavlyuk, A. A., Kovalyov, A. A., Preobrazhenskii, V. V., Putyato, M. A., Rubtsova, N. N., Semyagin, B. R., Kuleshov, N. V.

Journal:

Year:

2015

Language:

english

File:

PDF, 1.45 MB

english, 2015

7

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Vasev, A.V., Putyato, M.A., Preobrazhenskii, V.V.

Journal:

Surface Science

Year:

2018

Language:

english

File:

PDF, 974 KB

english, 2018

8

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Sun, Weiguo, Fan, Huitao, Peng, Zhenyu, Zhang, Liang, Zhang, Xiaolei, Zhang, Lei, Lu, Zhengxiong, Si, Junjie, Emelyanov, E., Putyato, M., Semyagin, B., Pchelyakov, O., Preobrazhenskii, V.

Journal:

Infrared Physics & Technology

Year:

2014

Language:

english

File:

PDF, 743 KB

english, 2014

9

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Materials Science and Engineering: A

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

10

Donor-acceptor recombination in type-II GaAs/AlAs superlattices

K. S. Zhuravlev, A. M. Gilinskii, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, S. S. Chipkin

Journal:

Physics of the Solid State

Year:

1998

Language:

english

File:

PDF, 94 KB

english, 1998

11

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 125 KB

english, 1998

12

New system of self-assembled GaSb/GaP quantum dots

D. S. Abramkin, M. A. Putyato, A. K. Gutakovskii, B. R. Semyagin…

Journal:

Year:

2012

Language:

english

File:

PDF, 388 KB

english, 2012

13

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Effect of As2 and As4 fluxes on the morphology of GaSb(001) surface during growth of GaSb/InAs heterojunction by MBE

Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Vasilenko, A., Feklin, D., Vasev, Andrey V., Preobrazhenskii, Valery V.

Year:

2011

Language:

english

File:

PDF, 987 KB

english, 2011

14

[IEEE 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol, Russia (2015.6.29-2015.7.3)] 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices - A solar cell, based on the epitaxial layers of AIIIBV compounds, transferred from the substrate onto the flexible polymeric carrier

Legan, Dmitry M., Petrushkov, Mikhail O., Emelianov, Eugene A., Putyato, Mikhail A., Preobrazhenskii, Valery V., Pchelyakov, Oleg P.

Year:

2015

Language:

english

File:

PDF, 450 KB

english, 2015

15

[IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings - Altai, China (2002.7.1-2002.7.5)] Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - New mechanism of nanosized InAs grains formation on porous silicon surface

Leonov, I.A., Sokolov, L.V., Preobrazhenskii, V.V., Semyagin, B.R., Putyato, M.A., Zakharov, N.D., Romanov, S.I., Volodin, V.V., Kolesnikov, A.V., Pchelyakov, O.P.

Year:

2002

Language:

english

File:

PDF, 248 KB

english, 2002

16

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Reflective interferometer for investigation of amplitude-phase characteristics of semiconductor nanostructures

Kovalyov, A. A., Putyato, M. A., Preobrazhenskii, V. V., Pchelyakov, O. P., Rubtsova, N. N., Samartsev, Vitaly V.

Year:

2012

Language:

english

File:

PDF, 535 KB

english, 2012

17

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Kononov, A., Kostarev, V. A., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Emelyanov, E. A., Deviatov, E. V.

Journal:

Physical Review B

Year:

2017

Language:

english

File:

PDF, 461 KB

english, 2017

18

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

19

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing

A. V. Vasev, M. A. Putyato, B. R. Semyagin, V. A. Seleznev, V. V. Preobrazhenskii

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 1.07 MB

english, 2008

20

Reflective interferometer for investigation of the amplitude-phase characteristics of semiconductor nanostructures

A. A. Kovalev, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, N. N. Rubtsova

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Year:

2009

Language:

english

File:

PDF, 136 KB

english, 2009

21

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Formation of HfO2/GaAs(001) interface with Si interlayer

Golyashov, Vladimir A., Aksenov, Maxim S., Valisheva, Natalya A., Prosvirin, Igor P., Kalinkin, Alexandr V., Preobrazhensky, Valery V., Putyato, Mikhail A., Semyagin, Boris. R., Tereshchenko, Oleg E.

Year:

2011

Language:

english

File:

PDF, 172 KB

english, 2011

22

Efficient high-power femtosecond Yb 3+ :KY(WO 4 ) 2 laser

Kovalyov, A A, Preobrazhenskii, V V, Putyato, M A, Rubtsova, N N, Semyagin, B R, Kisel, V E, Rudenkov, A S, Kuleshov, N V, Pavlyuk, A A

Journal:

Laser Physics Letters

Year:

2015

Language:

english

File:

PDF, 538 KB

english, 2015

23

Structural transformations in low-temperature grown GaAs:Sb

Vasyukov, D A, Baidakova, M V, Chaldyshev, V V, Suvorova, A A, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R

Journal:

Journal of Physics D Applied Physics

Year:

2001

Language:

english

File:

PDF, 338 KB

english, 2001

24

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Vasev, A. V., Putyato, M. A., Preobrazhenskii, V. V., Bakarov, A. K., Toropov, A. I.

Journal:

Year:

2018

Language:

english

File:

PDF, 351 KB

english, 2018

25

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Bert, Nikolay A., Chaldyshev, Vladimir V., Cherkashin, Nikolay A., Nevedomskiy, Vladimir N., Preobrazhenskii, Valery V., Putyato, Michael A., Semyagin, Boris R., Ushanov, Vitaliy I., Yagovkina, Maria

Journal:

Year:

2019

File:

PDF, 1.32 MB

2019

26

Self-mode-locking of the Nd3+:KGd(WO4)2laser using a multifunctional semiconductor mirror

N. N. Rubtsova, N. V. Kuleshov, V. E. Kisel’, A. A. Kovalev, S. V. Kuril’chik, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, T. S. Shamirzaev

Journal:

Year:

2009

Language:

english

File:

PDF, 176 KB

english, 2009

27

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

Chaldyshev, V.V., Bert, N.A., Romanov, A.E., Suvorova, A.A., Kolesnikova, A.L., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 563 KB

english, 2000

28

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2016

Language:

english

File:

PDF, 300 KB

english, 2016

29

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2018

Language:

english

File:

PDF, 231 KB

english, 2018

30

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

V.V Chaldyshev, N.N Faleev, N.A Bert, Yu.G Musikhin, A.E Kunitsyn, V.V Preobrazhenskii, M.A Putyato, B.R Semyagin, P Werner

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 187 KB

english, 1999

31

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

32

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

Petrushkov, M. O., Putyato, M. A., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Esin, M. Yu., Gavrilova, T. A., Vasev, A. V., Preobrazhenskii, V. V.

Journal:

Technical Physics Letters

Year:

2018

Language:

english

File:

PDF, 350 KB

english, 2018

33

[Novosibirsk Student Branch of IEEE 2003 Siberian Russian Workshop on Electron Devices and Materials Proceedings. 4th Annual - Erlagol, Atai, Russia (1-4 July 2003)] 2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664) - Control of wurzite GaN layer polarity on initial stages of growth during ammonia molecular beam epitaxy on (0001) Al/sub 2/O/sub 3/ substrate

Preobrazhenskii, V.V., Semyagin, B.R., Putyato, M.A., Khamzin, T.K., Mansurov, V.G., Toropov, A.I., Pchelyakov, O.P.

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

34

In–Ga intermixing in low-temperature grown GaAs delta doped with In

Bert, N. A., Chaldyshev, V. V., Musikhin, Yu. G., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 576 KB

english, 1999

35

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Bert, N. A., Chaldyshev, V. V., Kunitsyn, A. E., Musikhin, Yu. G., Faleev, N. N., Tretyakov, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

36

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION

KOVALYOV, A. A., PCHELYAKOV, O. P., PREOBRAZHENSKII, V. V., PUTYATO, M. M., RUBTSOVA, N. N., SOROKIN, E., SOROKINA, I. T.

Journal:

International Journal of Nanoscience

Year:

2007

Language:

english

File:

PDF, 115 KB

english, 2007

37

Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures

Chaldyshev, V.V., Brounkov, P.N., Suvorova, A.A., Konnikov, S.G., Preobrazhenski, V.V., Putyato, M.A., Semyagin, B.R.

Journal:

Solid State Phenomena

Year:

1997

File:

PDF, 387 KB

1997

38

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, R. Werner

Journal:

Year:

1998

Language:

english

File:

PDF, 452 KB

english, 1998

39

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2004

Language:

english

File:

PDF, 102 KB

english, 2004

40

Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures

N. N. Rubtsova, O. V. Buganov, A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenskii, O. P. Pchelyakov, S. A. Tikhomirov, T. S. Shamirzaev

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Year:

2008

Language:

english

File:

PDF, 159 KB

english, 2008

41

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science

Year:

2013

Language:

english

File:

PDF, 276 KB

english, 2013

42

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.66 MB

english, 2013

43

Fröhlich resonance in the AsSb/AlGaAs system

Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Physics of the Solid State

Year:

2014

Language:

english

File:

PDF, 234 KB

english, 2014

44

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

45

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Yu. B. Bolkhovityanov, A. P. Vasilenko, A. K. Gutakovskii, A. S. Deryabin, M. A. Putyato, L. V. Sokolov

Journal:

Physics of the Solid State

Year:

2011

Language:

english

File:

PDF, 870 KB

english, 2011

46

Influence of the Substrate Orientation on the Silicon Capture intoA- andB- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov

Journal:

Russian Physics Journal

Year:

2002

Language:

english

File:

PDF, 242 KB

english, 2002

47

Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

Emelyanov, E. A., Kokhanenko, A. P., Pchelyakov, O. P., Loshkarev, I. D., Seleznev, V. A., Putyato, M. A., Semyagin, B. R., Preobrazhenskii, V. V., Niu, Zhicuan, Ni, Haiqiao

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 776 KB

english, 2013

48

Fast mirrors for femtosecond passive mode-locked near-infrared lasers

Rubtsova, N N, Borisov, G M, Ledovskikh, D V, Kovalyov, A A, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R, Kisel’, V E, Rudenkov, A S, Kuleshov, N V, Pavlyuk, A A

Journal:

Year:

2016

Language:

english

File:

PDF, 323 KB

english, 2016

49

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

V.Ya Prinz, V.A Seleznev, A.K Gutakovsky, A.V Chehovskiy, V.V Preobrazhenskii, M.A Putyato, T.A Gavrilova

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2000

Language:

english

File:

PDF, 502 KB

english, 2000

50

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 79 KB

english, 1998

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